Title:
METHOD FOR MANUFACTURING SILICON CARBIDE WAFER, METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2021160971
Kind Code:
A
Abstract:
To provide a method for manufacturing a SiC wafer, capable of increasing the yield of a SiC wafer formed from a manufactured SiC single crystal ingot or the product yield of a semiconductor chip.SOLUTION: A method for manufacturing a SiC wafer includes gradually changing the diameter of a cylindrical part when forming the cylindrical part in a SiC single crystal ingot 80, concretely, expanding the diameter of the cylindrical part from the upper surface of the SiC single crystal ingot 80 toward the bottom surface thereof without forming the truncated cone shaped SiC single crystal ingot 80 into all cylindrical parts having the same diameter.SELECTED DRAWING: Figure 4
Inventors:
SOLTANI BAHMAN
SASYAMA KAZUTOSHI
HIBI YASUSHI
SASYAMA KAZUTOSHI
HIBI YASUSHI
Application Number:
JP2020063149A
Publication Date:
October 11, 2021
Filing Date:
March 31, 2020
Export Citation:
Assignee:
DENSO CORP
International Classes:
C30B33/00; B23K26/00; B24B1/00; B24B5/14; B28D5/04; C30B23/06; C30B29/36
Domestic Patent References:
| JP2009102196A | 2009-05-14 | |||
| JP2018125390A | 2018-08-09 | |||
| JP6334253B2 | 2018-05-30 | |||
| JP2020515504A | 2020-05-28 |
Attorney, Agent or Firm:
Patent Business Corporation Yuai Patent Office