Title:
METHOD OF MANUFACTURING ULTRAVIOLET LIGHT EMITTING DEVICE AND InAlGaN LIGHT EMITTING LAYER
Document Type and Number:
Japanese Patent JP3858042
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To emit light with high efficiency at room temperature in short wavelength region of ultraviolet region with a wavelength of 360 nm or less.
SOLUTION: A method uses an InAlGaN light emitting layer in which crystal growth is carried out at a growth temperature of 830°C to 950°C, and In is inductively introduced by introduction of Al so that a composition ratio of In is 2% to 20%, composition ratio of Al is 10% to 90%, and a total of composition ratio of In, Al, and Ga is 100%, and the InAlGaN light emitting layer emits light with high efficiency at room temperature in a short-wavelength region of deep ultraviolet region with a wavelength of 280 nm to a wavelength of 360 nm.
Inventors:
Hideki Hirayama
Katsunobu Aoyagi
Katsunobu Aoyagi
Application Number:
JP2005226357A
Publication Date:
December 13, 2006
Filing Date:
August 04, 2005
Export Citation:
Assignee:
RIKEN
International Classes:
H01L21/205; H01L33/32; H01S5/323; (IPC1-7): H01L33/00; H01L21/205; H01S5/323
Domestic Patent References:
| JP6164055A | ||||
| JP9153645A |
Attorney, Agent or Firm:
Junichi Ueshima