To provide a micro-electric contact capable of being used as an interposer.
A method for producing the electric contact comprises a step a) of plating the inner wall surfaces of holes of a plurality of vias (102) on a board (100), a step b) of forming a plurality of domes (202) in a first metallic sheet (200), a step c) of forming a mask layer on the first metallic sheet (200), a step d) of performing a first etching to the first metallic sheet (200) in all areas which are not protected by the first mask layer, a step e) of soldering the etched first metallic sheet (310) to the plural vias (102) whose inner wall surface of the holes are plated, a step f) of providing a second mask layer on the etched first metallic sheet (310), and a step g) of performing a second etching to the etched first metallic sheet (310) in all areas which are not protected by the second mask layer.
JPS61245476 | SOCKET FOR SEMICONDUCTOR DEVICE |
JP3225685 | CONTACT UNIT |
WHITE JOSEPH M