Title:
METHOD FOR PRODUCING QUARTZ GLASS CRUCIBLE FOR PULLING SILICON SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JP3717151
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method for producing a quartz glass crucible without any bubbles in a silicon single crystal and any dislocation, obtaining a high signal crystal ratio and having a high crucible production yield by carrying out a single crystal pulling.
SOLUTION: This method for producing a quartz glass crucible for pulling a silicon single crystal is characterized in that quartz raw material powder is supplied to a rotating mold to form a crucible-shaped body, which is melted by an arc, the whole inner surface of the molten crucible is polished and the polished surface is heat-treated by an oxyhydrogen burner.
Inventors:
Kijima Hiroshi
Atsuro Miyao
Kozo Kitano
Naoyuki Obata
Kimura Soju
Hiromi Funayama
Hiroyuki Yamaguchi
Ishiguro Shoro
Isao Maeda
Atsuro Miyao
Kozo Kitano
Naoyuki Obata
Kimura Soju
Hiromi Funayama
Hiroyuki Yamaguchi
Ishiguro Shoro
Isao Maeda
Application Number:
JP2000306491A
Publication Date:
November 16, 2005
Filing Date:
October 05, 2000
Export Citation:
Assignee:
Toshiba Ceramics Co., Ltd.
International Classes:
B24C1/08; B24C11/00; C03B19/09; C03B20/00; C03B29/02; C30B15/10; C30B29/06; (IPC1-7): C03B20/00; B24C1/08; B24C11/00; C30B15/10; C30B29/06
Domestic Patent References:
| JP2188489A | ||||
| JP11292694A | ||||
| JP1157427A |
Attorney, Agent or Firm:
Hisashi Hatano
Shunguchi Sekiguchi
Shunguchi Sekiguchi
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