METHOD FOR PROTECTION OF CONDUCTIVE SURFACE IN PLASMA PROCESSING REACTOR AND APPARATUS THEREFOR

Title:

METHOD FOR PROTECTION OF CONDUCTIVE SURFACE IN PLASMA PROCESSING REACTOR AND APPARATUS THEREFOR

Document Type and Number:

Japanese Patent JP3488734

Kind Code:

B2

Abstract:

PURPOSE: To prevent the formation of deposits on the surfaces of a chamber housing.
CONSTITUTION: A processing plasma is generated adjacently to a substrate 215 held on a substrate holder 216 in this process chamber. Electrically insulative liners 220 to 223 of a self standing type are arranged adjacently to the metallic walls 212 of the process chamber facing the processing plasma.

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Inventors:

Robert Robertson
Come S. Law
John MacNail White

Application Number:

JP869094A

Publication Date:

January 19, 2004

Filing Date:

January 28, 1994

Export Citation:

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Assignee:

APPLIED MATERIALS,INCORPORATED

International Classes:

B01J19/08; C23C16/44; C23C16/509; C30B25/08; H01J37/02; H01L21/205; H01L21/302; H01L21/3065; H01L21/31; (IPC1-7): C30B25/08; B01J19/08; H01L21/3065; H01L21/31

Domestic Patent References:

JP4367946A
JP1140821A
JP63138737A
JP1231322A

Attorney, Agent or Firm:

Yoshiki Hasegawa (2 outside)

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