METHOD FOR REMOVING SMEAR OF VIA HOLE

Japanese Patent JP3941433

B2

PROBLEM TO BE SOLVED: To surely remove smears without excessively etching a conductor layer part in a smear removing process, even if a hole diameter becomes small down to 40 μm, and the prepared hole of a via hole is made by laser irradiation.
SOLUTION: At the time of the soft etching of a smear removing process performed prior to a catalyst bestowal process for chemical copper plating, after the via hole 13 is formed in the insulating layer 12 of a multilayer substrate by laser irradiation, aqueous solution including sulfuric acid and hydrogen peroxide is used as the soft etching liquid. In an aqueous solution, the concentration of sulfuric acid is not more than 1.4 times that of hydrogen peroxide. The concentration of sulfuric acid is set preferably to 5 to 50 g/l and the concentration of sulfuric acid is lower than that of hydrogen peroxide, mare preferably the concentration of sulfuric acid is set to 5 to 10 g/l, and the concentration of hydrogen peroxide is 30 to 35 g/l.

Kyoko Kumagai
Toshihisa Shimo
Toshiki Inoue
Yoshifumi Kato
Takashi Yoshida
Rinobu Hidaka

JP2001240635A

July 04, 2007

August 08, 2001

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KABUSHIKI KAISHA TOYOTA JIDOSHOKKI

C25D5/34; C23C18/20; C25D7/00; H05K3/26; H01L21/3205; H05K1/11; H05K3/00; H05K3/06; H05K3/40; H05K3/46; H05K3/42; (IPC1-7): H05K3/26; C23C18/20; C25D5/34; C25D7/00; H05K1/11; H05K3/06; H05K3/40; H05K3/46

JP2001135750A
JP637455A
JP200124338A
JP11261216A
JP2001156451A
JP2001196744A
JP2000188482A

Hironobu Onda
Makoto Onda

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