To prevent excessive polishing caused by the generation of end point detection error in a chemimechanical polishing process and avoid generating corrosion which may be caused depending on a standby time in relation to a method for setting a polishing time.
A chemimechanical polishing process comprises a first polishing step of depositing a conductive film to cover a recess part provided in an insulating film, followed by roughing-out an unnecessary part of the conductive film and a second polishing step, including end point detection, of polishing an unnecessary part of the conductive film which has gone through the first polishing step to form an embedded conductive film, wherein the polishing time of the first polishing step is predetermined by an average plane-occupied ratio of the embedded conductive film.
SANTO NOBUAKI
Shoji Kashiwaya
Koichi Watanabe
Toshiro Ito
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