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Title:
MODULE TYPE SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2005032833
Kind Code:
A
Abstract:

To provide a module type semiconductor device wherein a joint and an insulating substrate are not damaged by thermal stress even if a semiconductor element made of silicon carbide is operated at a temperature of at least 300°C.

An insulating ceramic substrate 1 whose coefficient of thermal expansion approaches that of the semiconductor element 3 made of silicon carbide and which uses silicon nitride (Si3N4) with high heat transfer coefficient is used for the insulating substrate to which the semiconductor element 3 made of silicon carbide is joined.


Inventors:
ISHIWATARI YUTAKA
YAMAMOTO ATSUSHI
MATSUMOTO HISAAKI
SAITO SUZUO
YOSHINO TERUO
Application Number:
JP2003000193800
Publication Date:
February 03, 2005
Filing Date:
July 08, 2003
Export Citation:
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Assignee:
TOSHIBA CORP
International Classes:
H01L23/34; H01L23/08; H01L23/36; H01L23/373; H01L25/07; H01L25/18; (IPC1-7): H01L23/36; H01L23/08; H01L23/34; H01L23/373; H01L25/07; H01L25/18
Attorney, Agent or Firm:
三好 秀和
岩▲崎▼ 幸邦
川又 澄雄
中村 友之
伊藤 正和
高橋 俊一
高松 俊雄