Title:
MOLD, METHOD AND DEVICE OF MANUFACTURING MOLD, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2018085376
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To reduce roughness of a transfer pattern.SOLUTION: A side wall electrode mold 10 according to an embodiment comprises: a base 11 that has a first principal surface 11a; and one or more convex structures 12 provided on the first principal surface 11a. The convex structure 12 may comprise: a convex part 12a protruded from the first principal surface 11a of the base 11; a side wall electrode 15 provided on the convex part 12a; and an electrolytic hydrophobic film 14 provided on a convex upper end surface including the convex part 12a and the side wall electrode 15, and that has an electrolytic property and a hydrophobic property.SELECTED DRAWING: Figure 15
Inventors:
RI NAGAYOSHI
FUJITA HIROYUKI
FUJITA HIROYUKI
Application Number:
JP2016226043A
Publication Date:
May 31, 2018
Filing Date:
November 21, 2016
Export Citation:
Assignee:
TOSHIBA CORP
UNIV TOKYO
UNIV TOKYO
International Classes:
H01L21/027; B29C33/38; B29C59/02
Domestic Patent References:
| JP2015023189A | 2015-02-02 | |||
| JP2011206981A | 2011-10-20 | |||
| JP2010027743A | 2010-02-04 |
Attorney, Agent or Firm:
Sakai International Patent Office
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