NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND ITS MANUFACTURING METHOD

Title:

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND ITS MANUFACTURING METHOD

Document Type and Number:

Japanese Patent JPH0729999

Kind Code:

A

Abstract:

PURPOSE: To shorten a turnaround time by a method wherein connecting means for connecting a first electrode or a second electrode of a memory transistor is selectively provided above the memory transistor according to data to be stored.

CONSTITUTION: Source or drain regions 304 to 309 of a transistor composed of an N-type impurity layer and connecting means 201, 204 for connecting the source to the drain of this transistor are formed. Namely, data is stored in a memory transistor part by the connecting means 201, 204 for connecting selectively a first electrode or a second electrode of a memory transistor. A step of forming these connecting means 201, 204 can be made after a gate electrode forming step of the memory transistor. Accordingly, the period from the step of storing data into a memory transistor part according to memory data received from the user to the delivery of this nonvolatile semiconductor memory device to the user can be reduced.

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Inventors:

MAKIHARA HIROYASU
OKUGAKI AKIRA
KODA KENJI
KANEKO MASAHIDE

Application Number:

JP17536093A

Publication Date:

January 31, 1995

Filing Date:

July 15, 1993

Export Citation:

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Assignee:

MITSUBISHI ELECTRIC CORP

International Classes:

H01L21/8246; H01L27/112; (IPC1-7): H01L21/8246; H01L27/112

Attorney, Agent or Firm:

Takada Mamoru

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