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Patent Searching and Data


Title:
NONVOLATTILE SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
Japanese Patent JPH0721787
Kind Code:
A
Abstract:

PURPOSE: To perform a stable read-out capable of coping with the wide fluctuation of a power supply voltage by providing a feedback control circuit outputting a constant voltage which does not depend on the power supply voltage to a node when the power supply voltage becomes higher than a prescribed value.

CONSTITUTION: Gates of transistors IF2, 1 in inverter circuits INV11, 12 of the side of memory cells and of transistors IF3, 4 in inverter circuits INV13, 14 of the side of dummy memory cells are connected to a node vcon1, whose voltage is controlled by a feedback circuit FC. In the circuit FC, transistors DN1 to 3 are in 'off' before the power supply voltage Vcc reaches a prescribed voltage 4.5V and the voltage Vcc is outputted to the node. When the voltage Vcc becomes higher than 4.5V, DN1 to 3 go to 'on' and the constant voltage 4.5V which does not depend on the power supply voltage Vcc is outputted to the node. Then, the drain voltage of the transistor DF2 in the circuit 11 is held at a constant level. Thus, the stable read-out capable of coping with the wide fluctuation of the power supply voltage can be performed.


Inventors:
NAKAI HIROTO
Application Number:
JP1993000168059
Publication Date:
January 24, 1995
Filing Date:
July 07, 1993
Export Citation:
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Assignee:
TOSHIBA CORP
International Classes:
G11C17/00; G11C16/06; (IPC1-7): G11C16/06
Attorney, Agent or Firm:
佐藤 一雄 (外3名)