PURPOSE: To obtain a small-sized optical sensor which enables conversion of optical signals in a wide wavelength region from visible rays to invisible rays, by placing a photoelectric transducer for visible rays on a photoelectric transducer for invisible rays.
CONSTITUTION: On a first photoelectric transducer for converting optical signals in the invisible region to electric signals, a second photoelectric transducer for converting optical signals in the invisible region to electric signal is placed. For instance, on an N-type Si substrate 1, a P-type semiconductor layer 2 and an N-type semiconductor layer 4 are disposed to detect infrared rays. Further, on this structure, an image electrode 10 of Ti or the like is provided through a thin insulation film 5, and inter-layer insulation films 7 and 9, and thereon, an a-Si layer 11 as an amorphous semiconductor layer shared by respective R, g and B elements, a P-type Si layer 12, a transparent electrode 13 of ITO or the like, and color filter 14 are provided to detect visible rays. Visible rays are received by a multilayer Schottky photodiode of ITO 13/P-type a-Si 12/a-Si 11/Ti 10.
OZU ITSUO
SUGAWA SHIGETOSHI
MIYAWAKI MAMORU
Next Patent: PHOTOELECTRIC TRANSDUCER