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Patent Searching and Data


Title:
OXIDE FILM, METHOD FOR PRODUCING THE SAME, TARGET, AND METHOD FOR PRODUCING OXIDE SINTERED COMPACT
Document Type and Number:
Japanese Patent JP2011174167
Kind Code:
A
Abstract:

To achieve high performance of an oxide film as a p-type conductive film and a p-type transparent conductive film.

The oxide film is a film of an oxide containing one transition element selected from the group consisting of niobium (Nb) and tantalum (Ta) and further containing copper (Cu) (the film may contain unavoidable impurities). Further, this oxide film is an aggregate of fine crystals, an amorphous film containing fine crystals, or an amorphous film which shows no distinct diffraction peak in XRD (X-ray diffraction) analysis as shown in the charts of Fig.5 that show the results of XRD analysis of a first oxide film and a second oxide film, and has p-type conductivity. This oxide film can have higher p-type conductivity than conventional oxide films. Since this oxide film is the aggregate of fine crystals, the amorphous film containing fine crystals, or the amorphous film as described above, formation thereof on a large substrate is easy. The oxide film hence is suitable for industrial production.


Inventors:
YAMAZOE SEIJI
WADA TAKAHIRO
Application Number:
JP2010000170331
Publication Date:
September 08, 2011
Filing Date:
July 29, 2010
Export Citation:
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Assignee:
UNIV RYUKOKU
International Classes:
C23C14/08; C04B35/00; C23C14/24; C23C14/34; H01B5/14; H01B13/00
Attorney, Agent or Firm:
Hiroaki Kono