Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
Philharmonic a P-N separation metal for flip chip LED
Document Type and Number:
Japanese Patent JP5990574
Kind Code:
B2
Abstract:
A light emitting diode (LED) structure (10) has semiconductor layers, including a p-type layer, an active layer, and an n-type layer. The p-type layer has a bottom surface, and the n-type layer has a top surface through which light is emitted. Portions of the p-type layer and active layer are etched away to expose the n-type layer. The surface of the LED is patterned with a photoresist, and copper is plated over the exposed surfaces to form p and n electrodes electrically contacting their respective semiconductor layers. There is a gap between the n and p electrodes. To provide mechanical support of the semiconductor layers between the gap, a dielectric layer (34) is formed in the gap followed by filling the gap with a metal (42). The metal is patterned to form stud bumps (40, 42, 44) that substantially cover the bottom surface of the LED die, but do not short the electrodes. The substantially uniform coverage supports the semiconductor layer during subsequent process steps.

Inventors:
Ray Zip
Way Yajun
Nickel alexander h
Siafino Stefano
Steigerwald Daniel Alexander
Application Number:
JP2014511976A
Publication Date:
September 14, 2016
Filing Date:
April 25, 2012
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
KONINKLIJKE PHILIPS N.V.
International Classes:
H01L33/38; H01L33/32
Domestic Patent References:
JP2007300063A
JP5007019A
JP2010508669A
JP2011071339A
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Shinsuke Onuki
Susumu Tsugaru
Fueda Shusen
Keiichi Asamura