Title:
PHOTODIODE, PIXEL CIRCUIT, AND METHOD OF MANUFACTURING PHOTODIODE
Document Type and Number:
Japanese Patent JP2019079968
Kind Code:
A
Abstract:
To reduce a pixel capacity while suppressing a dark current in a photodiode that performs charge amplification.SOLUTION: An amplification region amplifies photoelectrically converted charges. A cathode electrode outputs the amplified charges. A predetermined reference potential is applied to a reference electrode. A pinning region is embedded with the cathode electrode and the reference electrode and has a lower impurity concentration than the reference electrode. A barrier region is disposed between the pinning region and the amplification region and has a lower impurity concentration than the pinning region.SELECTED DRAWING: Figure 4
Inventors:
ITO KYOSUKE
WAKANO HISASHI
OTAKE YUSUKE
WAKANO HISASHI
OTAKE YUSUKE
Application Number:
JP2017206729A
Publication Date:
May 23, 2019
Filing Date:
October 26, 2017
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP
International Classes:
H01L27/146; H01L31/10
Domestic Patent References:
| JP2015041746A | 2015-03-02 | |||
| JP2013030511A | 2013-02-07 |
Attorney, Agent or Firm:
Toshikazu Marushima