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Title:
PHOTOELECTRIC CONVERSION DEVICE
Document Type and Number:
Japanese Patent JPS58196064
Kind Code:
A
Abstract:
PURPOSE:To increase the light transmission into an intrinsic amorphous Si film by a method wherein one conductivity type amorphous Si film wherein oxygen atoms and carbon atoms are introduced, the intrinsic amorphous Si film, and a reversed conductivity type amorphous Si film are successively arranged. CONSTITUTION:A clear conductive film 2 is formed on a glass substrate 1. Further, the one conductivity type amorphous Si layer 3 wherein carbon atoms and oxygen atoms are introduced is formed thereon. The optical energy band gap is enlarged by the introduction of carbon atoms and oxygen atoms, thus the photo absorption loss in the one conductivity type amorphous Si layer 3 is reduced, and accordingly the efficiency of utilizing light can be enhanced. The intrinsic or nearly intrinsic amorphous Si layer is formed on the one conductivity type amorphous Si layer 3, and further the reversed conductivity type amorphous Si layer is formed thereon.

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Inventors:
HIRAO TAKASHI
ISHIHARA SHINICHIROU
KITAGAWA MASATOSHI
MORI KOUSHIROU
OONO MASAHARU
Application Number:
JP7931482A
Publication Date:
November 15, 1983
Filing Date:
May 11, 1982
Export Citation:
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Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L31/04; H01L31/06; H01L31/075; H01L31/18; (IPC1-7): H01L31/04
Domestic Patent References:
JPS5760875A1982-04-13
Attorney, Agent or Firm:
Akira Kobiji (2 outside)