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Patent Searching and Data


Title:
PHOTORESIST SYSTEM
Document Type and Number:
Japanese Patent JP3164565
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To obtain a portable conformable mask system suitable for photoetching using i-lines.
SOLUTION: A lower resist layer comprising a polymethyl methacrylate in which a coloring material selected from the group of N,N'-dibutyl-N,N'-di(1-(4,4'-dicyano-1,3-butadiene))-1,6-hexadiamines and 3-(2- benzothiazolyl)-7-(diethylamino)-2H-1-benzopyran-2-one have been dissolved is deposited on a semiconductor substrate and an upper resist layer contg. a resist material contg. a coloring material B having a chemical structure of the formula and a novolak resin to which acetate of a mono or dialkyl ether of ethylene glycol (solvent) and diazonaphthoquinone have been added is deposited on the lower resist layer.


Inventors:
Goel, Atul
Application Number:
JP1999000178491
Publication Date:
May 08, 2001
Filing Date:
March 02, 1989
Export Citation:
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Assignee:
HEWLETT PACKARD CO <HP>
International Classes:
H01L21/027; G03F7/004; G03F7/028; G03F7/09; G03F7/095; G03F7/11; G03F7/20; G03F7/26; (IPC1-7): G03F7/26; H01L21/027
Attorney, Agent or Firm:
加藤 公久