PURPOSE: To form a fine pattern whose reliability is high and which is composed of molybdenum by a method wherein the surface of an electrode interconnection material is cleaned and treated by using an inert gas inside a plasma treatment apparatus used to form an insulating film.
CONSTITUTION: Molybdenum as an electrode interconnection is deposited on a semiconductor substrate by a sputtering method. Then, the surface of the electrode interconnection is first plasma-cleaned by using a plasma treatment apparatus used to form an insulating film; then, SiO2 as an etching mask is deposited continuously; in addition, a resist pattern is formed by a lithographic process. Before the SiO2 is deposited by a bias ECR method, the surface of the molybdenum is plasma-cleaned by using Ar. When the surface of the molybdenum is cleaned by using the Ar, no oxide of molybdenum is formed on the surface. Also in terms of a close contact property, the same close contact property as that when the surface is cleaned by using oxygen can be obtained. Then, the molybdenum is dry-etched by making use of the resist SiO2 as a mask; after that, measures to deal with aftercorrosion is taken by executing a rinsing treatment.
HOSOYA TETSUO
KANAMORI SHUICHI
OIKAWA HIDEO
