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Patent Searching and Data


Title:
POLISHING METHOD AND POLISHING APPARATUS
Document Type and Number:
Japanese Patent JP2020203375
Kind Code:
A
Abstract:
To provide a polishing method enabling polishing of a substrate such as wafer to be terminated in a preset polishing time.SOLUTION: A polishing method includes the steps of: polishing a substrate W by pressing the substrate W against a polishing surface 3a of a polishing pad 3 while regulating a temperature of the polishing surface 3a by a heat exchanger 11; calculating a target polishing rate required for an actual polishing time to match with a target polishing time, the actual polishing time being a time from polishing start of the substrate W until a film thickness of the substrate W reaches a target thickness; determining a target temperature of the polishing surface 3a at which the target polishing rate is achieved; and during polishing the substrate W, changing a temperature of the polishing surface 3a to the target temperature by the heat exchanger 11.SELECTED DRAWING: Figure 1

Inventors:
KABASAWA MASASHI
Application Number:
JP2020093103A
Publication Date:
December 24, 2020
Filing Date:
May 28, 2020
Export Citation:
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Assignee:
EBARA CORP
International Classes:
B24B37/015; B24B37/005; B24B49/10; B24B49/12; B24B49/14; H01L21/304
Attorney, Agent or Firm:
Tetsuya Hirosawa
Isamu Watanabe
Goto Manabu
Kanazawa Mitsuhiro