Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
POLISHING METHOD FOR SILICON WAFER OF SEMICONDUCTOR
Document Type and Number:
Japanese Patent JP3052517
Kind Code:
B2
Abstract:

PURPOSE: To reduce the OSF density, enhance the surface precision, and enhance the producibility in a polishing method for the initial stage of mechani polishing in the manufacturing processes for semiconductor silicon wafers.
CONSTITUTION: The polishing rate is enhanced using a polishing pressure for example 10-50% higher than the conventional level, i.e., between 0.55 and 0.8kg/cm2, and the secular change of a polishing cloth resulting from polishing in the high pressure region is corrected by co-rubbing using a diamond dresser, and as a final stage, a surface treatment is made with a polishing pressure for example 10-50% sunk from the conventional level, i.e., ranging between 0.25 and 0.45kg/cm2, and thereby the OSF density is reduced and the surface precision is enhanced.


Inventors:
Yoshino, Hisafumi
Matsuo, Hiroshi
Application Number:
JP1991000359170
Publication Date:
June 12, 2000
Filing Date:
December 27, 1991
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
KYUSHU ELECTRON METAL CO LTD
OSAKA TITANIUM CO LTD
International Classes:
B24B37/005; B24B37/015; H01L21/304; (IPC1-7): B24B37/00; H01L21/304
Attorney, Agent or Firm:
池条 重信 (外2名)