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Title:
PROCESS AND APPARATUS FOR PRODUCING EPITAXIAL AND/OR HIGHLY TEXTURED GROWN FILM, FREE OF FOREIGN PHASE, OF HIGH-TC-OXIDE SUPERCONDUCTOR ON SUBSTRATE
Document Type and Number:
Japanese Patent JPH02164793
Kind Code:
A
Abstract:

PURPOSE: To obtain an epitaxial and/or highly texturized grown film, free of foreign phases, of a high-Tc-oxide superconductor by depositing droplets having diameters of μ range on a substrate held at a specific temp.

CONSTITUTION: A pulsed electron beam 4 with an electron energy of 10 to 20 keV and a current density of 103 to 104 A/cm2 is generated by applying high voltage to an electron generating source 1 via a high voltage power source 3 and a capacitor 2 and the beam 4 is carried in a ceramic tube 5 and then is made to collide with a spender target 6 to cause ablation of the spender target. The developing droplets 7 having diameters of μ range are grown on a receive target 8 held at a temp. (300 to 400°C) at which the droplets coagulate into an uniform smooth film. Thus the film of the high-Tc-oxide superconductor which is highly texturized and is free of foreign phases is formed and at the same time, a part of droplets 7 is deposited on a target 8 side terminal of the ceramic tube 5 as a pollutant 9.


Inventors:
KURISUTOFU SHIYURUTOHAISU
YOTSUHEN GEERUKU
HANSU KAROBU
Application Number:
JP26315689A
Publication Date:
June 25, 1990
Filing Date:
October 11, 1989
Export Citation:
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Assignee:
KERNFORSCHUNGSZ KARLSRUHE
International Classes:
C30B23/08; C23C14/28; C23C14/30; C23C26/02; C30B23/02; C30B29/22; H01B12/06; H01B13/00; H01L39/24; (IPC1-7): C30B23/08; C30B29/22; H01B12/06; H01B13/00; H01L39/24