Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
PRODUCTION OF JOINED BODY OF P TYPE DIAMOND AND N TYPE CUBIC BORON NITRIDE
Document Type and Number:
Japanese Patent JPH04139077
Kind Code:
A
Abstract:

PURPOSE: To produce the above joined body by forming the single crystal of P type diamond as a uncleus and growing an N type cBN crystal on this single crystal.

CONSTITUTION: The raw material for BN is disposed in the high-temp. part in a growing vessel at the high temp. and high pressure stable for diamond and cBN, and this raw material is dissolved in a solvent contg. silicon. A temp. difference is provided in this solvent and the single crystal of the N type cBN is precipitated on the single crystal of the P type diamond disposed in the low-temp. part in the vessel by utilizing the difference in the rate of dissolution by temp. For example, a cylindrical heater 1 is used and the raw material 3 of cBN (powder of 325 to 400 meshes) and the lithium boronitride as the solvent 4 added with the powder silicon are packed into the Mo vessel 5. The single crystal 6 of the diamond having a P type semiconductor characteristic synthesized by a temp. difference method is disposed. The sample constituted in such a manner is set in an ultra-high pressure device and is treated for 40 hours at 55 kilobar pressure and 1450°C, by which the single crystal of the N type cBN is grown on the single crystal 6 as the uncleus.


Inventors:
TANAKA KAZUMITSU
MIYAMOTO MANABU
Application Number:
JP26073490A
Publication Date:
May 13, 1992
Filing Date:
September 28, 1990
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
KOBE STEEL LTD
International Classes:
C04B37/00; B01J3/06; (IPC1-7): B01J3/06; C04B37/00