Title:
PRODUCTION OF JUNCTION TYPE FIELD EFFECT TRANSISTOR OF VERTICAL STRUCTURE
Document Type and Number:
Japanese Patent JPS5354980
Kind Code:
A
Abstract:
PURPOSE: To produce a junction type FET of vertical structure of a high break down voltage and of smaller capacity between gate and source more readily than before by forming a thermal oxide film on the circumference of a mask layer covering the regionintended for source.
More Like This:
| JPS62112377 | FIELD EFFECT TRANSISTOR FOR INTEGRATED CIRCUIT |
| JPS62195177 | VERTICAL BURIED TYPE TRANSISTOR |
| JPS5213781 | JUNCTION TYPE FIELD EFFECT TRANSISTOR |
Inventors:
KATOU MARI
Application Number:
JP13082976A
Publication Date:
May 18, 1978
Filing Date:
October 29, 1976
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L29/80; H01L21/31; H01L29/06; (IPC1-7): H01L21/31; H01L29/06; H01L29/80
Domestic Patent References:
| JPS49126278A | 1974-12-03 | |||
| JPS5194778A | 1976-08-19 |