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Title:
PRODUCTION OF PZT THIN FILM AND SPUTTERING DEVICE
Document Type and Number:
Japanese Patent JP2688872
Kind Code:
B2
Abstract:

PURPOSE: To provide the PZT thin film having a prescribed compsn. and crystal structure by supplying incident lead on substrates in an excessive amt. in such a manner that the films attain prescribed stoichiometric compsn. ratios at a high substrate temp. by using targets of prescribed combinations.
CONSTITUTION: The films are deposited on the substrates 30 while a substrate holder 28 is rotated at 30rpm speed by supplying 300W electric power to 3 pieces of the PZT targets 16, 18, 20 and 0 to 45W electric power to one piece of the PbO target 22. The thin films of the single phase of perovskite are obtd. when the incident atomic flux ratio of the lead on the substrates is controlled in such a manner that the Pb/(Zr+Ti) ratio in the film attains ≥1 at 700°C substrate temp.


Inventors:
Kazuo Hirata
Takashi Hase
Toshiyuki Sakuma
Youichi Miyasaka
Application Number:
JP28115692A
Publication Date:
December 10, 1997
Filing Date:
September 28, 1992
Export Citation:
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Assignee:
Anerva Co., Ltd.
NEC
International Classes:
C23C14/08; C23C14/34; H01B3/00; H01B3/12; (IPC1-7): C23C14/08; C23C14/34; H01B3/00; H01B3/12
Domestic Patent References:
JP63224187A
JP2217468A
JP61266565A
Attorney, Agent or Firm:
Suzuki Toshiyuki



 
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