Title:
PRODUCTION OF RIBBON-LIKE SILICON CRYSTAL
Document Type and Number:
Japanese Patent JPS62182198
Kind Code:
A
Abstract:
PURPOSE:To obtain a ribbon-like silicon crystal at a low cost, by attaching a specific supporting member at the bottom of a crucible filled with molten silicon, contacting the member with a seed crystal and applying downward tension to the crystal, thereby decreasing the warpage of produced crystal and enabling continuous growth of crystal. CONSTITUTION:Two or more members 4a, 4b (e.g. carbon fiber) for supporting crystal edges and having diameter of about 0.5mm are passed through two or more small holes 2a, 2b having inner diameter of about 1.5mm and bored at the bottom of a crucible 1. The distance between the members is set to about 100mm. The crucible 1 is filled with molten liquid of silicon 3. A seed crystal such as carbon foil 5 having a width of about 96mm is lowered from above to the vicinity of the molten liquid 3 at a specific temperature. The foil 5 is attached to both ends of the supporting members 4a, 4b and is flattened by the application of a downward tension of about 150g. The foil 5 is lowered until its lower end is dipped in the molten silicon 3 at a depth of about 2mm. A flat ribbon-like silicon crystal can be grown by pulling up the foil from the molten silicon 3.
Inventors:
KOBAYASHI MICHIYA
Application Number:
JP2531086A
Publication Date:
August 10, 1987
Filing Date:
February 07, 1986
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
C30B29/06; C30B15/34; H01L21/18; H01L21/208; (IPC1-7): C30B15/34; C30B29/06; H01L21/18
Attorney, Agent or Firm:
Takehiko Suzue
Previous Patent: METHOD FOR CRYSTAL GROWTH OF MERCURY CADMIUM TELLURIDE
Next Patent: DIFFUSION FURNACE
Next Patent: DIFFUSION FURNACE