PRODUCTION OF SEMICONDUCTOR DEVICE FOR DISPLAY

Title:

PRODUCTION OF SEMICONDUCTOR DEVICE FOR DISPLAY

Document Type and Number:

Japanese Patent JPH095791

Kind Code:

A

Abstract:

PURPOSE: To uniformly and efficiently introduce impurities into semiconductor thin films with a low-temp. treatment.

CONSTITUTION: The first semiconductor thin film 2, a gate insulating film 3 and the second semiconductor thin film 4 are successively formed on a transparent insulating substrate 1. Plural transistors(TRs) are integrated and formed by working these semiconductor thin films 2, 4. The semiconductor device for display is formed by integrating and forming pixel electrodes 11 connected to the respective TRs. At this time, diffusion source films 5 contg. the impurities are deposited in direct superposition on the respective semiconductor thin films 2, 4. The impurities are diffused from the diffusion source films 5 into the semiconductor thin films 2, 4 by integral irradiation with a laser beam so as to include the plural TRs.

Inventors:

URAZONO TAKENOBU
HAYASHI HISAO
INO MASUMITSU
KUNII MASABUMI
NISHIHARA SHIZUO

Application Number:

JP17420795A

Publication Date:

January 10, 1997

Filing Date:

June 16, 1995

Export Citation:

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Assignee:

SONY CORP

International Classes:

G02F1/136; G02F1/1368; G09F9/30; H01L21/225; H01L21/268; H01L21/336; H01L29/786; (IPC1-7): G02F1/136; G09F9/30; H01L21/225; H01L21/268; H01L21/336; H01L29/786

Attorney, Agent or Firm:

Suzuki Harutoshi

Next Patent: ACTIVE MATRIX TYPE DISPLAY DEVICE