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Patent Searching and Data


Title:
PRODUCTION OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2000208628
Kind Code:
A
Abstract:

To provide a satisfactory contact property without degrading an organic interlayer film.

A lower metal wiring layer 2 is formed in a prescribed region on a semiconductor substrate 1. A contact metal 3 is formed on this lower metal wiring layer 2, While using a photoresist 4A. After the photoresist 4A is removed, an organic inter layer film 5 is formed on that removed surface. In this case, the organic inter layer film 5 is provided so as to cover only the lower part of the contact metal 3, and a second insulating film 6 is formed on the surfaces of the organic inter layer film 5 and the contact metal 3. The second insulating film 6 on the contact metal 3 is removed, and an upper metal wiring layer 7 is formed on the contact metal 3.


Inventors:
OIKAWA YOICHI
Application Number:
JP1999000010360
Publication Date:
July 28, 2000
Filing Date:
January 19, 1999
Export Citation:
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Assignee:
NEC CORP
International Classes:
H01L21/302; H01L21/28; H01L21/283; H01L21/3065; H01L21/312; H01L21/768; H01L23/522; (IPC1-7): H01L21/768; H01L21/28; H01L21/283; H01L21/3065; H01L21/312
Attorney, Agent or Firm:
平田 忠雄