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Patent Searching and Data


Title:
PRODUCTION OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5336181
Kind Code:
A
Abstract:
PURPOSE:To reduce the production of cracks and increase dicing yield by forming insulation films of thermal expansion differing from that of a substrate in the mesa grooves provided opposedly on the front and back of the semiconductor substrate, scribing the substrate down to a depth of more than 1/3 the thickness of the substrate from one of the mesa grooves with a tapered diamond blade, then cracking the substrate to pellets by flexing.

Inventors:
MIHARA KIYOHIKO
FUJII TOSHIYUKI
KITABI SHIGERU
ISHIBASHI YOSHIO
Application Number:
JP11058276A
Publication Date:
April 04, 1978
Filing Date:
September 14, 1976
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/301; B24B19/02; H01L21/78; (IPC1-7): H01L21/78