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Title:
PRODUCTION OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5397781
Kind Code:
A
Abstract:

PURPOSE: To make shallow pn junctions and gate electrodes of high accuracy by covering source and drain regions with Si3 N4, and diffusing an impurity at a high concentration to poly-Si gate eletrodes.


Inventors:
YAMANAKA YOUJI
WADA TOSHIO
TAGUCHI TSUNEHIRO
Application Number:
JP1977000012757
Publication Date:
August 26, 1978
Filing Date:
February 07, 1977
Export Citation:
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Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L29/78; H01L21/28; H01L21/306; (IPC1-7): H01L21/28; H01L29/60; H01L29/62; H01L29/78



 
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