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Title:
PRODUCTION OF SEMICONDUCTOR SINGLE CRYSTAL BY FLOATING ZONE MELTING METHOD
Document Type and Number:
Japanese Patent JPH11314993
Kind Code:
A
Abstract:

To automatically control the diameter of a crystallized single crystal with high accuracy and to improve the quality of produced semiconductor single crystal, in the production of a semiconductor single crystal by a floating zone melting method.

This semiconductor single crystal having a prescribed shape is produced by: determining the coil application voltage V to be applied to an induction heating coil 2 based the shape of at least any one of a raw material 8 and a single crystal 11 crystallized, detecting the grid current G of a vacuum tube 9A in a high frequency oscillator 1A at the time of applying the coil application voltage V to the induction heating coil 2, and correcting the coil application voltage V based on the difference (ΔG) between the detected grid current value Gm and a prescribed grid current target value, thereby controlling the shape of the crystallized single crystal 11. At the time of forming the top of the single crystal 11, the shape of the top can accurately be controlled by changing the method for determining the coil application voltage V correspondingly to the molten state of the raw material 8.


Inventors:
SUZUKI TSUTOMU
Application Number:
JP13760098A
Publication Date:
November 16, 1999
Filing Date:
April 30, 1998
Export Citation:
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Assignee:
KOMATSU DENSHI KINZOKU KK
International Classes:
C30B13/30; H01L21/208; (IPC1-7): C30B13/30; H01L21/208
Attorney, Agent or Firm:
松澤 統