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Patent Searching and Data


Title:
RESIST COMPOSITION AND FORMING METHOD OF RESIST PATTERN
Document Type and Number:
Japanese Patent JPH0580515
Kind Code:
A
Abstract:

PURPOSE: To form a high sensitive resist pattern excellent in dry etching resistance and resolution with extreme ultraviolet radiation as a light source in a forming method of the resist pattern.

CONSTITUTION: The resist composition consists of a copolymer of 2-norbornen-2- sustituent expressed by the formula with acrylic ester and photo acid generating agent. The resist pattern is formed by selectively exposing the resist applied on a substrate to be treated and by developing with alkali after baking. In the formula, X is cyano group (-CN) or chlorine group (-Cl), R is tert-butyl group, dimethyl benzyl group or tetrahydropyranyl group.


Inventors:
KAIMOTO HIROKO
NOZAKI KOJI
Application Number:
JP1991000239871
Publication Date:
April 02, 1993
Filing Date:
September 19, 1991
Export Citation:
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Assignee:
FUJITSU LTD
International Classes:
G03F7/004; G03F7/027; G03F7/029; G03F7/039; G03F7/20; H01L21/027; (IPC1-7): G03F7/004; G03F7/027; G03F7/029; G03F7/039; G03F7/20; H01L21/027
Attorney, Agent or Firm:
Teiichi