RESIST COMPOSITION AND METHOD OF PRODUCING RESIST PATTERN

Japanese Patent JP2014112210

A

To provide a resist composition that enables production of a resist pattern with an excellent exposure margin (EL).

A resist composition contains a resin that has a structural unit represented by formula (I) and a structural unit represented by formula (a4) and does not have an acid-labile group, a resin having an acid-labile group, and an acid generator represented by formula (II), wherein R¹ and R³ are a hydrogen atom or a methyl group; R² is an alicyclic hydrocarbon group; L¹ is a divalent saturated hydrocarbon group or a single bond; R⁴ is a saturated hydrocarbon group having a fluorine atom; R^b1 and R^b2 are independently a fluorine atom or a perfluoroalkyl group; L^b1 is a divalent saturated hydrocarbon group; a ring W^b1 is a heterocycle; R^b3 is a hydrogen atom or a hydrocarbon group; R^b4 is a hydrocarbon group; m is an integer of 0-6; and Z1⁺ is an organic cation.

JPH07140656	PHOTOPOLYMERIZABLE COMPOSITION
WO/2022/044706	ACTINIC RAY SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD

ICHIKAWA KOJI
SAKAMOTO HIROSHI
HIRAOKA TAKASHI

JP2013217570A

June 19, 2014

October 18, 2013

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SUMITOMO CHEMICAL CO

G03F7/038; C08F220/12; C08F220/22; G03F7/004; G03F7/039; H01L21/027

JP2011145424A	2011-07-28
JP2009008824A	2009-01-15
JP2012027438A	2012-02-09

US20110318688A1	2011-12-29
WO2011087144A1	2011-07-21
WO2012046607A1	2012-04-12
WO2011105626A1	2011-09-01

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