RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMING METHOD

Japanese Patent JP2015025987

A

PROBLEM TO BE SOLVED: To provide a resist protective film material that can prevent an overhang of a resist pattern caused by amine contamination in air and has a sensitizing effect on the resist film and thereby, can improve sensitivity of a resist film.SOLUTION: The resist protective film material is used in a pattern forming method by lithography, in which a protective film of a resist protective film material is formed on a photoresist layer formed on a wafer and the resist is exposed and then developed; and the resist protective film material comprises a polymeric compound having a recurring unit expressed by general formula (1) as a base resin. In the formula, R represents a hydrogen atom or a hydroxy group; Rrepresents a hydrogen atom, hydroxy group, alkyl group, alkoxy group, acyloxy group, alkoxycarbonyl group, carboxyl group, or -OC(=O)R, where Ris an alkyl group or a fluorinated alkyl group; m represents 1 or 2; and p and q represent positive numbers satisfying 0