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Title:
SAPPHIRE SINGLE CRYSTAL GROWTH APPARATUS
Document Type and Number:
Japanese Patent JP2014125404
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To adjust temperature of a sapphire single crystal body being pulled, with good control in response to the growing condition of the sapphire single crystal body.SOLUTION: In a sapphire single crystal growth apparatus, together with a first induction coil 32 arranged around a crucible 10, there is provided a second induction coil 36 arranged around an after heater member 20, at an interval between it and the first induction coil 32. The apparatus is also provided with a second power source 34 which heats the pulled sapphire single crystal body 15 by electrifying a second high-frequency current through the second induction coil 36 to make the after heater member 20 generate heat and control means 50 of adjusting the magnitude and phase of a first high-frequency current and the magnitude and phase of the second high-frequency current. The control means 50 adjusts the phase of the first high-frequency current and the phase of the second high-frequency current in such a way that the phase of the second high-frequency current is reverse to the phase of the second high-frequency current.

Inventors:
MURASE YU
Application Number:
JP2012284972A
Publication Date:
July 07, 2014
Filing Date:
December 27, 2012
Export Citation:
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Assignee:
KYOCERA CORP
International Classes:
C30B29/20; C30B15/14; F27B14/20; F27D11/06; H05B6/06; H05B6/24; F27B14/04; F27B14/06; F27B14/14