Title:
SCHOTTKY BARRIER DIODE AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2016119420
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a technique for improving voltage resistance of an SBD which has a p-type contact region and an n-type drift region on a contact surface between a semiconductor substrate and an anode electrode.SOLUTION: An SBD to be provided has a semiconductor substrate, and an anode electrode in contact with the semiconductor substrate. The semiconductor substrate has a p-type contact region in contact with the anode electrode and an n-type drift region in Schottky contact with the anode electrode within a range in which the p-type contact region is not formed. The p-type contact region has a plurality of annular regions and an internal region. The plurality of annular regions are arranged spaced away from one another from an outer peripheral side to an inner peripheral side on a contact surface between the semiconductor substrate and the anode electrode. The internal region is formed at an inner peripheral part of the annular region on the innermost peripheral side, and connected to the annular region on the innermost side.SELECTED DRAWING: Figure 2
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Inventors:
NAGAOKA TATSUJI
MIYAKE HIROKI
WATANABE YUKIHIKO
AOI SACHIKO
AKIBA ATSUYA
MIYAKE HIROKI
WATANABE YUKIHIKO
AOI SACHIKO
AKIBA ATSUYA
Application Number:
JP2014259316A
Publication Date:
June 30, 2016
Filing Date:
December 22, 2014
Export Citation:
Assignee:
TOYOTA MOTOR CORP
TOYOTA CENTRAL RES & DEV
DENSO CORP
TOYOTA CENTRAL RES & DEV
DENSO CORP
International Classes:
H01L29/872; H01L21/329; H01L29/06; H01L29/47
Domestic Patent References:
| JP2014187115A | 2014-10-02 | |||
| JP2009016603A | 2009-01-22 | |||
| JP2008004643A | 2008-01-10 |
Attorney, Agent or Firm:
Kaiyu International Patent Office