PURPOSE: To provide a semiconductor device having uniform temperature distribution in which the fluctuation is suppressed in the characteristics of unit transistors.
CONSTITUTION: A substrate 1 has a curved rear surface and the central part thereof is made thinner than the opposite end parts. A plurality of heavily doped active layer 5, 5... are formed in a row, at a predetermined interval, in the center on the surface of the substrate 1 over a length of 200μm toward the opposite end parts with the channel thereof directing toward the opposite end parts. Source electrodes 2, 2... and drain electrodes 3, 3... are then formed alternately on the active layers 5, 5... Channel regions 4, 4... are formed between the active layers 5, 5 and gate electrodes 6, 6... are formed thereon.
MURAI SHIGEYUKI
YAMAGUCHI TSUTOMU
HARADA YASOO
