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Title:
SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPH0536680
Kind Code:
A
Abstract:

PURPOSE: To suppress the elongation of a selectively oxidized field oxide film to an active area and, at the same time, to improve the reliability of a semiconductor device.

CONSTITUTION: A groove is formed in the element isolation area of a substrate 2 and the groove is filled up with a field oxide film 18, with silicon oxide films 20 being formed on the sidewalls 16 of the groove between the film 18 and substrate 2. The surface of the silicon oxide films 20 remaining in the element isolation area is flattened so that the surfaces of the films 20 and substrate 2 can be leveled.


Inventors:
DOURA SHOJI
Application Number:
JP1991000209858
Publication Date:
February 12, 1993
Filing Date:
July 26, 1991
Export Citation:
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Assignee:
RICOH KK
International Classes:
H01L21/302; H01L21/3065; H01L21/316; H01L21/76; (IPC1-7): H01L21/302; H01L21/316; H01L21/76
Attorney, Agent or Firm:
Noguchi Shigeo



 
Next Patent: JPH0536681