SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

Title:

SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

Document Type and Number:

Japanese Patent JPH10125779

Kind Code:

A

Abstract:

To attain a fine circuit, without needing a step of patterning a deposited second layer electrode material by depositing a later insulation film on a base electrode and emitter electrode of a first layer, boring through-holes through electrodes of the first layer, burying an electrode material therein to form wiring electrodes of a second layer.

In, esp., a step and structure of manufacturing parts form leading base electrodes 18 and emitter electrodes 19, a silicon oxide film is deposited as a layer insulation film 22 on the entire surface, through-holes 31 are bored through the base and emitter electrodes 18, 19 and a metal material is deposited to fill up these parts. Without patterning the deposited metal material for electrodes, base wiring electrodes, bonding pads 23, emitter wiring electrodes and bonding pads 25 can be formed. This eliminates the need of a step of patterning the deposited second layer electrode material so as to register with the holes 31 of the first layer electrodes.

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Inventors:

KINOSHITA KAZUHIRO

Application Number:

JP27596496A

Publication Date:

May 15, 1998

Filing Date:

October 18, 1996

Export Citation:

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Assignee:

TOSHIBA CORP

International Classes:

H01L21/28; H01L21/331; H01L21/60; H01L21/768; H01L23/522; H01L29/417; H01L29/73; H01L29/732; (IPC1-7): H01L21/768; H01L21/28; H01L21/331; H01L21/60; H01L29/417; H01L29/73

Attorney, Agent or Firm:

Kazuo Sato (3 others)

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