Title:
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2014207433
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can stably improve a withstanding voltage between a source and a drain while preventing increase in the number of manufacturing processes.SOLUTION: Formed is a semiconductor device which includes: an n-type first source region 13 and a first drain region 14 which are formed on a surface of a p-type epitaxial layer 4; an n-type first source-side drift region 19 and a first drain-side drift region 20 which are formed so as to surround the first source region 13 and the first drain region 14, respectively; a p-type first diffusion region 22 having a concentration higher than that of the epitaxial layer 4 formed in a first channel region 21; and a p-type first withstanding voltage keeping region 23 which is formed on a region between the first diffusion region 22, and the first source-side drift region 19 and the first drain-side drift region 20, and has a concentration lower than that of the first diffusion region 22.
Inventors:
UJIIE YOHEI
Application Number:
JP2014022686A
Publication Date:
October 30, 2014
Filing Date:
February 07, 2014
Export Citation:
Assignee:
ROHM CO LTD
International Classes:
H01L29/78; H01L21/336; H01L21/8234; H01L27/088
Domestic Patent References:
| JPH0621447A | 1994-01-28 | |||
| JPH0621447A | 1994-01-28 | |||
| JP2007081041A | 2007-03-29 | |||
| JPH0831957A | 1996-02-02 | |||
| JPH01265555A | 1989-10-23 | |||
| JP2007081041A | 2007-03-29 | |||
| JPH0831957A | 1996-02-02 | |||
| JPH01265555A | 1989-10-23 |
Foreign References:
| WO2012050783A1 | 2012-04-19 | |||
| WO2012050783A1 | 2012-04-19 |
Attorney, Agent or Firm:
Kosaku Inaoka
Kawasaki Real husband
京村 Junji
Kawasaki Real husband
京村 Junji
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