SEMICONDUCTOR DEVICE PAD AND MANUFACTURE OF THE SAME

Title:

SEMICONDUCTOR DEVICE PAD AND MANUFACTURE OF THE SAME

Document Type and Number:

Japanese Patent JP2000208629

Kind Code:

A

Abstract:

To use all remaining parts other than an etched region as a pad, by utilizing the selection ratio between a pad formation conductive film and mask insulating film for an etch-back process at pad formation.

An inter-layer insulating film 112 with a selection ratio to a silicon nitride film 110 is formed over the entire surface of a semiconductor substrate 100, over which a polysilicon film 116 with a selection ratio to a silicon nitride film 105 is formed. A part of the thickness of the polysilicon film 116 is etched, with the inter-layer insulating film 112 done as an EPD(end point detect) film. Other polysilicon film 116 and inter-layer insulating film 112 are etched for a specified period after time-etching, and then an etching process utilizing selection ratio is performed to isolate a contact pad, so that a storage contact pad 116 and bit line contact pad 116b are formed.

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Inventors:

LEE JAE-GOO
CHO CHANG-HYUN

Application Number:

JP32458699A

Publication Date:

July 28, 2000

Filing Date:

November 15, 1999

Export Citation:

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Assignee:

SAMSUNG ELECTRONICS CO LTD

International Classes:

H01L21/28; H01L21/311; H01L21/3213; H01L21/60; H01L21/768; H01L21/8242; H01L27/108; (IPC1-7): H01L21/768; H01L27/108; H01L21/8242

Attorney, Agent or Firm:

Masatake Shiga (1 person outside)

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