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Title:
SEMICONDUCTOR DEVICE AND PRODUCTION THEREOF
Document Type and Number:
Japanese Patent JPH05160254
Kind Code:
A
Abstract:

PURPOSE: To prevent the deterioration of a threshold voltage, eliminate etching liquid residue and prevent wiring short circuits by providing a first groove on a first conducting layer, providing a second groove which communicates with the first groove and has a smaller diameter than the first groove in a semiconductor substrate and providing a second insulating film on the first and the second grooves.

CONSTITUTION: A polycrystalline silicon layer 25 is provided with a first groove 27, and a silicon substrate 21 is provided with a second groove 29 which communicates with the first groove 27 and that has a smaller width than the width of the groove 27. A buried insulating film 32a is provided in the first and second grooves 27 and 29. Therefore, the edge 39a of a channel area 39 formed on the silicon substrate 21 under gate electrode wiring 34a is formed at a position in response to the side plane 27a of the first groove 27. Thus, the edge 39a in the channel area 39 is separated from the side plane 32d of the buried insulating film 32a in the groove 29. Therefore, when a voltage is applied to a gate electrode, electric field concentration on the side plane 32d is prevented and threshold voltage deterioration is prevented.


Inventors:
MORITA SHIGERU
Application Number:
JP32574291A
Publication Date:
June 25, 1993
Filing Date:
December 10, 1991
Export Citation:
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Assignee:
TOSHIBA CORP
International Classes:
H01L21/76; H01L21/31; H01L21/3205; H01L23/52; H01L27/08; (IPC1-7): H01L21/31; H01L21/3205; H01L21/76; H01L27/08
Attorney, Agent or Firm:
Takehiko Suzue



 
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