Title:
半導体装置、及び、半導体装置の電圧設定方法
Document Type and Number:
Japanese Patent JP6424715
Kind Code:
B2
Abstract:
A semiconductor device includes a substrate; a first through-electrode penetrating the substrate and connected to a power source or a reference potential point; a second through-electrode penetrating the substrate; a power section connected between the substrate and the second through-electrode and configured to output a DC voltage between the substrate and the second through-electrode; a voltage control section configured to control the DC voltage to be output by the power section; and a measurement section connected to the first through-electrode and configured to measure a power impedance of the first through-electrode, wherein the voltage control section is configured to control a value of the DC voltage output by the power section, such that the power impedance of the first through-electrode measured by the measurement section is equal to or less than a predetermined value within a predetermined frequency range including a frequency of noise occurring in the first through-electrode.
Inventors:
Makoto Suwada
Application Number:
JP2015074989A
Publication Date:
November 21, 2018
Filing Date:
April 01, 2015
Export Citation:
Assignee:
富士通株式会社
International Classes:
H01L21/822; H01L21/3205; H01L21/768; H01L23/12; H01L23/14; H01L23/522; H01L27/04
Domestic Patent References:
| JP2009176922A | ||||
| JP2014228523A | ||||
| JP2013153020A | ||||
| JP200994133A | ||||
| JP200999718A | ||||
| JP2011155144A |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Takao Kato
Tadahiko Ito
Takao Kato