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Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2004273793
Kind Code:
A
Abstract:

To provide a semiconductor device in which an area in a direction parallel to a main surface of a semiconductor substrate can be reduced.

A source electrode Vdd15 is formed in a region between field PMOS1 and field PMOS 2 as high side switches of a latch circuit. In the latch circuit, a lower side of either high side switch is used in a completely depleted state. A p+-type impurity diffusion region 12, an n+-type impurity diffusion region 14 and a p+-type impurity diffusion region 16 connected to the source electrode Vdd are shared in field PMOS1 and field PMOS2.


Inventors:
TERAJIMA TOMOHIDE
Application Number:
JP2003062927A
Publication Date:
September 30, 2004
Filing Date:
March 10, 2003
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/822; H01L21/336; H01L21/8234; H01L27/04; H01L27/07; H01L27/08; H01L27/088; H01L29/739; (IPC1-7): H01L21/8234; H01L21/822; H01L27/04; H01L27/08; H01L27/088
Domestic Patent References:
JPH0449672A1992-02-19
JPH10200102A1998-07-31
JP2002313942A2002-10-25
JP2002134691A2002-05-10
JP2001189454A2001-07-10
Attorney, Agent or Firm:
Kuro Fukami
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai