To provide a semiconductor device without a constriction in the second wiring formed in the vicinity of the inside of first wiring having a part bent orthogonally.

When the second wiring is formed in the vicinity of the inside of the bent part 11' of the first wiring 11, a dummy pattern 12 of a rectangular triangle formed of the same material as that of the first wiring 11 is formed while locating a vertex facing a long side at the bent part 11' of the first wiring 11. Thus, an underlaying insulating film and corners caused in a slope region 15 formed on the material film of the second wiring are made only an obtuse angle larger than 90°owing to a step difference of the first wiring 11. Consequently, a function of the slope region 15 is deteriorated as a concave mirror.