Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2019211786
Kind Code:
A
Abstract:
To provide a method for driving a semiconductor device, which can reduce influence of variations in threshold value voltage of a transistor, and influence of variations in movability of the transistor.SOLUTION: A method for driving a semiconductor device has: an n-channel conductivity type transistor; a switch for controlling electrical connection of a gate of the transistor to a first terminal; a capacitive element electrically connected between the gate of the transistor and a second terminal; and a display element. The method has: a first period in which the sum of voltage corresponding to threshold value voltage of the transistor and picture signal voltage is held in the capacitive element; a second period in which the switch is put in a conductive state to discharge, via the transistor, electrical charges held in the capacitive element in accordance with the sum of the picture signal voltage and the threshold value voltage; and a third period in which current is supplied, via the transistor, to the display element after the second period.SELECTED DRAWING: Figure 1
Inventors:
KIMURA HAJIME
Application Number:
JP2019154079A
Publication Date:
December 12, 2019
Filing Date:
August 26, 2019
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
G09F9/30; H01L21/336; H01L21/822; H01L21/8234; H01L27/04; H01L27/06; H01L27/088; H01L27/32; H01L29/786; H01L51/50; H05B33/02
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