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Patent Searching and Data


Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP5913390
Kind Code:
B2
Abstract:
An objective is to provide a method of manufacturing a semiconductor device, and a semiconductor device manufactured by using the manufacturing method, in which a laser crystallization method is used that is capable of preventing the formation of grain boundaries in TFT channel formation regions, and is capable of preventing conspicuous drops in TFT mobility, reduction in the ON current, and increases in the OFF current, all due to grain boundaries. Stripe shape or rectangular shape unevenness or opening is formed. Continuous wave laser light is then irradiated to a semiconductor film formed on an insulating film. Note that although it is most preferable to use continuous wave laser light at this point, pulse wave oscillation laser light may also be used.

Inventors:
Sanpei Yamazaki
Atsushi Isobe
Hidekazu Miyairi
Koichiro Tanaka
Chiho Kawanabe
Akihisa Shimomura
Tatsuya Arao
Mai Akiba
Application Number:
JP2014004910A
Publication Date:
April 27, 2016
Filing Date:
January 15, 2014
Export Citation:
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Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; H01L21/20; H01L21/336; H01L21/77; H01L21/84; H01L27/12; H01L27/148; H01L29/04; H05B44/00
Domestic Patent References:
JP2015675A
JP5218415A
JP63293881A
JP2002198532A
JP5198759A
Foreign References:
US20020003256
US4951102