Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS56108235
Kind Code:
A
Abstract:
PURPOSE:To obtain an insulating film having excellent property to block Na ions or the like, moisture resistance, corrosion resistance and workability by continuously varying the P concentration of PSG. CONSTITUTION:On the surface of an Si substrate formed with an element region, a PSG thin film 8 is formed by the CVD method. Gradually varying the mixture ratio of the material gas when the film is being grown permits the P concentration of the film 8 to vary continuously from the lower layer to the upper layer: in the surface SiO2 accounts for more than 99% and the remoter from the surface, the more P2O5 increases. The P concentration of the film at the surface is selected to be several moles to approximately 15mol. By said constitution, if the PSG film is thickened to the order of 15mu there is no abnormal growth of particles, so that the surface is smooth, and a film having excellent cation blocking property, moisture resistance and workability can be obtained.
Inventors:
YANAI MASAHARU
Application Number:
JP1036380A
Publication Date:
August 27, 1981
Filing Date:
January 31, 1980
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L29/78; H01L21/316; H01L23/29; H01L23/31; (IPC1-7): H01L21/316; H01L29/78
Domestic Patent References:
| JP52099774B | ||||
| JPS4719774A |
Previous Patent: ETCHING TREATMENT METHOD
Next Patent: METHOD AND APPARATUS FOR RESIN SEAL FOR SEMICONDUCTOR DEVICE
Next Patent: METHOD AND APPARATUS FOR RESIN SEAL FOR SEMICONDUCTOR DEVICE