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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5732669
Kind Code:
A
Abstract:

PURPOSE: To enable the design of heat dissipation in a semiconductor device by internally containing a current detecting resistor in an output transistor, thereby distinguishing between an electric power unit for handling a large current and a controller operated with a small current.

CONSTITUTION: This semiconductor device has a semiconductor substrate including a transistor consisting of a base 11, an emitter 12 and a collector region 10, as well as a base electrode 14, an emitter electrode 15, a collector 16 corresponding to the base, the emitter and collector regions and other fourth electrode 18. Resistors 5 formed in the substrate are connected between the electrodes 15 and 18. A current detecting resistor 5 is thus contained in an output transistor 3, thereby eliminating a large current in a thick film circuit unit and preventing the difficulty due to disconnection of a wire caused by a swinging temperature.


Inventors:
JINMON MASASHI
Application Number:
JP10868780A
Publication Date:
February 22, 1982
Filing Date:
August 06, 1980
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L29/73; H01L21/331; H01L29/72; (IPC1-7): H01L27/06; H01L29/08