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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS60161631
Kind Code:
A
Abstract:
PURPOSE:To prevent the generation of a bird beak in a U groove-shaped isolation and a V-shaped stepped section in an upper surface by projecting the height of the upper surface of SiO2 formed in a U groove from the surface of a substrate while positioning the height of a lower surface at a position upper than the lower end of the U groove. CONSTITUTION:U grooves 14 are formed on an silicon substrate 10 through etching while using an SiO2 film 11 and a first Si3N4 film 12 as masks. SiO2 films 15 and second Si3N4 films 16 are shaped on the inner surfaces of the U grooves 14. Silicon is grown in an epitaxial manner from the inner bases of the U grooves 14, and the thickness XE of growing silicon 17 is made approximately the same as the etching depth Xd of the substrate 10. Silicon 17 is oxidized, and SiO2 layers 18 are formed projected onto the substrate 10. The films 12, 11 are etched to constitute U groove-shaped isolations. The SiO2 films 15 are not further oxidized because they are interrupted by the second Si3N4 layers 16, and no bird beak is generated.

Inventors:
ITOU KATSUHIKO
NOJIRI KAZUO
TSUKUNI KAZUYUKI
Application Number:
JP1520184A
Publication Date:
August 23, 1985
Filing Date:
February 01, 1984
Export Citation:
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Assignee:
HITACHI LTD
International Classes:
H01L21/31; H01L21/316; H01L21/331; H01L21/76; H01L29/73; H01L29/78; (IPC1-7): H01L21/95; H01L29/72; H01L29/78
Domestic Patent References:
JPS5432984A1979-03-10
JPS5791536A1982-06-07