SEMICONDUCTOR ELEMENT CAPABLE OF TUNING MACRO AND MICRO FREQUENCIES, AND ANTENNA AND FREQUENCY TUNING CIRCUIT INCLUDING THE SEMICONDUCTOR ELEMENT

Title:

SEMICONDUCTOR ELEMENT CAPABLE OF TUNING MACRO AND MICRO FREQUENCIES, AND ANTENNA AND FREQUENCY TUNING CIRCUIT INCLUDING THE SEMICONDUCTOR ELEMENT

Document Type and Number:

Japanese Patent JP2008113000

Kind Code:

A

Abstract:

To provide a semiconductor element capable of tuning macro and micro frequencies, and to provide an antenna and a frequency tuning circuit including the semiconductor element, the semiconductor element in which a PIN diode and a varactor diode are configured by a single element, thereby solving insertion loss, complexity of DC power supply circuit, increase in circuit volume, deterioration of varactor diode linearity, and the like.

The present invention relates to a semiconductor element capable of tuning macro and micro frequencies, and an antenna and a frequency tuning circuit including the semiconductor element. The semiconductor element includes a first semiconductor and a second semiconductor having a same polarity, a third semiconductor disposed between the first semiconductor and the second semiconductor and having a polarity differing from that of the first semiconductor and the second semiconductor, and a pair of intrinsic semiconductors respectively disposed between the first semiconductor and the third semiconductor and between the third semiconductor and the second semiconductor.

More Like This:

JPH02266572	SEMICONDUCTOR DEVICE
JP6742925	Semiconductor device and power conversion device using it
WO/1999/022407	LATERAL SILICON CARBIDE SEMICONDUCTOR DEVICE HAVING A DRIFT REGION WITH A VARYING DOPING LEVEL

Inventors:

JUNG CHANG-WON
CHOI JUNG-HAN
SO INSO
KIM YOUNG-EIL

Application Number:

JP2007277548A

Publication Date:

May 15, 2008

Filing Date:

October 25, 2007

Export Citation:

Click for automatic bibliography generation Help

Assignee:

SAMSUNG ELECTRONICS CO LTD

International Classes:

H01L29/861; H01L21/329; H01L21/822; H01L27/04; H01L29/868; H01L29/93; H01Q5/00; H01Q5/10; H01Q5/321; H01Q9/42

Domestic Patent References:

JP2004014658A	2004-01-15
JPH06350109A	1994-12-22
JPH0456363A	1992-02-24
JPH07183767A	1995-07-21

Attorney, Agent or Firm:

Yukio Ono
Tomoko Inazumi

Previous Patent: CHARGED PARTICLE EXPOSURE EQUIPMENT

Next Patent: DEVICE PROCESSING SUBSTRATE USING PLASMA, METHOD OF SUPPLYING PLASMA, AND METHOD OF SUPPLYING PLASMA...